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Program

Date
Place
  • Room B (Room 324)
  • 2. Quantum Dot Light-Emitting Diodes
  • August 19, 2015 (Wednesday)
  • 09:00 ~ 10:30
  • [2-2]
  • 09:25 ~ 09:50
  • Title:[Invited]  Solution-Processed and High-Performance Light-Emitting Diodes Based on Quantum Dots
  • Yizheng?Jin (Zhejiang Univ, China)

  • Abstract: Here we report a solution-processed multi-layer QLED with outstanding performance and excellent reproducibility3. Our QLED device show fine color-saturated emission. The symmetric emission?peak at 640 nm with a narrow full-width-at-half-maximum of 28 nm corresponds to Commission Internationale de l'Eclairage (CIE) color coordinates of (0.71, 0.29), is ideal for display applications. The QLED exhibits high EQE up to 20.5%, low efficiency roll-off (>15% of EQE at 100 mA cm-2), and a long operational lifetime of more than 100,000 hours at 100 cd m-2, making this device the best-performing solution-processed red LED to date and comparable to the state-of-art vacuum-deposited OLEDs. The exceptional optoelectronic performance is achieved by inserting an insulating interlayer between the QD layer and the oxide electron transport interlayer (ETL) to preserve the superior optical properties of the QDs and ensure charge balance in the devices without sacrificing charge injection efficiency. We anticipate that our results will be a starting point for further research, leading to high-performance and all-solution-processed QLEDs ideal for next-generation display and solid-state lighting technologies.

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