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Program

Date
Place
  • Room B (Room 324)
  • 2. Quantum Dot Light-Emitting Diodes
  • August 19, 2015 (Wednesday)
  • 09:00 ~ 10:30
  • [2-4]
  • 10:15 ~ 10:30
  • Title:Ultraviolet Electroluminescence Devices Using CdZnS/ZnS Quantum Dots
  • Jeonghun Kwak (Dong-A Univ., Korea), Jaehoon Lim, Myeongjin Park, Seonghoon Lee, Kookheon Char, and Changhee Lee (Seoul Nat'l Univ., Korea)

  • Abstract: We demonstrate ultraviolet (UV) light-emitting quantum dot light-emitting diodes (QLEDs) with a peak wavelength down to 377 nm in an inverted device structure which can facilitate hole injection into colloidal quantum dots (CQDs). Thin-film based UV LEDs have been introduces using organic molecules?or metal oxides. But they exhibited much lower radiance than GaN-based UV LEDs. Also, they show wide spectral bandwidths including visible emission. On the other hands, the UV QLEDs show a high power density with narrow emission only in UV region. Thus, the UV QLEDs can be used in various applications as the light source for counterfeit detection, photo-polymerization, and photo-excitation. We would like to introduce a synthetic method of UV-emitting alloyed CdZnS/ZnS CQDs as well as the UV QLEDs in this presentation.

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