Date
Place
- Room B (Room 324)
- 23. OLED Materials
- August 20, 2015 (Thursday)
- 09:00 ~ 10:10
- [23-2]
- 09:15 ~ 09:30
- Title:Novel High Performance Hole Transporting Materials for OLEDs
- Poopathy?Kathirgamanathan, Sivagnanasundram?Surendrakumar (Brunel Univ. London, U.K.), Mutulingam?Kumaraverl (Univ. of Manchester Innovation Centre, U.K.), Seenivasagam?Ravichandran (Brunel Univ. London, U.K.), Mi sun?Ryu (Takoma Tech. Co., Ltd., Korea), J.?Kim, H. M.?Kim, and Jin?Jang (Kyung Hee Univ., Korea)
Abstract: Transport (hole and electron) materials are an essential component in the development of OLEDs as they play a critical role in providing balanced charge injection and transport [1, 2]. We have synthesized two new hole transporting materials (HTS-08 and HTS-11) with high triplet energies (2.8 and 2.9 e.V.) and high Tg values (135 and 124 oC). HTS-08 is solution processible and thus an exciting material for low-cost device manufacture. We prepared three devices: the first with ¥á-NPB (a well-established OLED HTL material) for comparison, the second with HTS-11 (both via vacuum thermal evaporation) and the third with HTS-08 via spin coating. The energy level diagram and device structure is given in Fig. 1. As can be seen in Fig. 2, HTS-11 gives over? 63% increase in current efficiency and 53% power efficiency (58.8 cd/A and 29.1 lm/W @ 10000 nits for HTS-11) compared with ¥á-NPB as a hole transporter ( 35.9 cd/A and 18.9 lm/W @ 10000 nits for ¥á-NPB) and the solution-processed ?HTS-08 devices demonstrated similar performance (36.5 cd/A and 16 lm/W @ 10000 nits) to the ¥á-NPB device. Furthermore, preliminary measurements indicate that device lifetimes of HTS-11 is also comparable to ¥á-NPB.
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