Date

Place

Room A (Room 325)
29. Advanced TFT Backplane Technologies II
August 20, 2015 (Thursday)
11:00 ~ 12:30

[29-4]
12:15 ~ 12:30
Title:Comparative Study of the Effect of Hydrogen Content on Electrical Properties of Zn-Sn-O (ZTO) and In-Ga-Zn-O (IGZO) Thin-Film Transistors
Ryota Takenouchi, Tatsuya Toda (Kochi Univ. of Tech., Japan), Rintaro Ishii, Hiroki Takahashi (Mitsui Mining & Smelting Co., Ltd. , Japan), Dapeng Wang, and Mamoru Furuta (Kochi Univ. of Tech., Japan)
Abstract: In this study rare-metal free zinc tin oxide (ZTO) TFT was investigated. In our previous publication, it was reported that hydrogen content in the IGZO channel influenced threshold voltage (Vth) and sub-threshold swing (S.S.) of the TFT, and it could be controlled by the nitrous-oxide/silane (N2O/SiH4) gas ratio during the SiOx etch-stopper (ES) layer deposition. In this research, the effect of hydrogen in channel on electrical properties of the ZTO TFT was compared with that of the IGZO TFT. To control hydrogen content in the channel, N2O/SiH4 gas ratio was varied during the ES-SiO2 deposition. The Vth of ZTO and IGZO TFTs exhibited similar tendency when N2O/SiH4 gas ratio was reduced. While the S.S. of ZTO TFT was quite steeper than that of the IGZO TFT. Moreover, it is noted that when N2O/SiH4 gas ratio decreased, the S.S. almost unchanged for ZTO TFTs, whereas that for IGZO TFTs improved gradually. These results suggest that the effect of hydrogen or hydrogen content in the channel was different between the ZTO and IGZO TFTs. Thus, the hydrogen contents in the ZTO and IGZO channels were quantitatively analysed by secondary ion mass spectrometry (SIMS) to investigate the effect of hydrogen in more detail.
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