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Program

Date
Place
  • Room H (Room Hall 1, 1F)
  • P2. Poster Session II
  • August 21, 2015 (Friday)
  • 14:00 ~ 15:30
  • [P2-11]
  • 14:00 ~ 15:30
  • Title:Improvement of NBTIS Stability in Sandwiched Active Structure with Al2O3 Interlayer in Solution Processed Oxide TFTs
  • Dongha Kim, Hyungjin Park (KAIST, Korea), Jungho Jin (Univ. of Ulsan, Korea), and Byeong-Soo Bae (KAIST, Korea)

  • Abstract: In order to improve the NBIS and NBTIS-induced TFT stability, Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide thin films to form a sandwiched triple layer. The Al2O3 layer acts as a photo-induced positive charge blocking layer. All the thin films were fabricated by sol-gel process.

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