Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-127]
- 14:00 ~ 15:30
- Title:Dependency of the Emission Efficiency on Doping Profile of the Red Phosphorescent Organic Light-Emitting Diodes
- Kanghoon Kim, Jootae Park, Wonhyeok Park, Daechoon Kim, Ukrae Lee, and Sang Soo Kim (Sungkyunkwan Univ., Korea)
Abstract: Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/ CBP(30nm)/TPBi(10nm)/Alq3 (20nm)/LiF(0.8nm)/ Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps
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