Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-22]
- 14:00 ~ 15:30
- Title:Plasma-Enhanced Atomic Layer Deposition Processed Amorphous Indium Zinc Oxide Thin-Film Transistor for Ultra-High Definition Display Application
- Jong Beom Ko, Hye In Yeom (KAIST, Korea), Chi Sun Hwang, Sung Haeng Cho (ETRI, Korea), and Sang-Hee Ko Park (KAIST, Korea)
Abstract: High mobility conformal indium zinc oxide (IZO) was fabricated by plasma-enhanced atomic layer deposition (PEALD) for the application to the vertical thin-film transistor (V-TFT) of which footprint is the smallest of all TFTs. The IZO was firstly applied to bottom gate bottom contact structured TFT to result in the mobility of 24.4 cm2/Vs with high stability. We also demonstrate for the first time the feasibility of channel layer of IZO by PEALD for the V-TFT.
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