Date

Place

[P2-24]
14:00 ~ 15:30
Title:Annealing Process Development for Amorphous InWO Thin Film Transistors
Ling Xu, Qi Wu, Haiting Xie, Jianeng Xu (Shanghai Jiao Tong Univ., China), Qun Zhang (Fudan Univ., China), and Chengyuan Dong (Shanghai Jiao Tong Univ., China)
Abstract: Recently amorphous InWO (a-IWO) thin film transistors (TFTs) were proved to show high field-effect mobility (��FE) and stable properties, implying their potential applications in active matrix flat panel displays . However, the influence of processing conditions on the electrical performance of a-IWO TFTs is still unclear. In this study, the effect of annealing conditions including annealing temperature and annealing time in air on the performance of a-IWO TFTs was investigated in detail, where the related physical mechanisms were analyzed with studying the microstructures and properties of a-IWO films.
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