Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-26]
- 14:00 ~ 15:30
- Title:The Effect of Poly(4-vinylphenol-co-methyl methacrylate)/Titanium Dioxide Nanocomposite Gate Insulator in Solution-Processed 6, 13-Bis(triisopropylsilyethynyl)-Pentacene Thin-Film Transistors
- Gyeong-Tae Park, Sang Chul Lim, Dong Ic Lee, Se Hyuk Yeom, Myung Chan An, Chang Taek Seo, Gyu Seok Choi, and Heon Gon Kim (Gumi Electronics and Information Tech. Research Inst., Korea)
Abstract: high-dielectric-constant(high-k) polymers are very favorable for low-voltage operation of these TFTs. Accordingly, Nanocomposite insulators consisting of chemically cross-linkable polymers and high-k nanoparticles are promising materials for solution-processed organic TFTs. It must be noted that minimizing insulator thickness is a challenge owing to pinhole defects, although it also allows the dielectric capacitance to increase. In this study, we investigated the effect of poly(4-vinylphenol-co-methyl methacrylate)/Titanium dioxide (TiO2) Nanocomposite gate insulators in 6,13-bis(triisopropylsilylethynyl) Pentacene (TIPS-Pentacene) Thin Film Transistors(TFT).? The Naocomposite insulator were also studied upon TiO2 content change of the Naocomposite insulator. These results will be presented.
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