Date

Place

[P2-40]
14:00 ~ 15:30
Title:SiO2 Gate Insulator by RF Magnetron Sputtering with Various Oxygen Ratio
Min-Taek Hong, J. K. Kim, S. J. Moon, E. J. Yun, and Byung-Seong Bae (Hoseo Univ., Korea)
Abstract: The characteristics of thin film transistor (TFT) is greatly influenced by gate insulator properties. Typical parameters of TFT are electron mobility, threshold voltage and On/Off ratio which are influenced by gate insulator. Widely used material for gate insulator is SiO2 which is rich in the earth and inexpensive. Plasma enhanced chemical vapor deposition (PECVD) is used for the deposition of the gate insulator to get the high quality insulator at the low temperatures below 400 ��.? SiO2 deposited by RF magnetron sputter has been investigated due to low deposition temperature [1] and reduction of both the investment and maintenance cost. The factors to affect the properties of the silicon oxide insuoators are substrate temperature, RF power, pressure, oxygen mixing ratio during deposition of the oxide. The effect of the oxygen mixing ratio to Ar was investigated to improve the property of the oxide. Figure 1 shows the leakage currents of the oxide insulators for various oxygen mixing ratio from 0% to 20%. As graph shows breakdown voltage increased as O2 mixture ratio increased from 0% to 20%. Since the depostion rate decreased as increasing oxygen ratio, we adjusted deposition time to set the thickness 150 nm under RF power of 150 W.
PDF Download

Type