Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-42]
- 14:00 ~ 15:30
- Title:Effect of Channel Widths on Electrical Characteristics of Bendable a-Si:H TFTs
- Hyungon Oh, Kyoungah Cho, Youngin Jeon, Sukhyung Park, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim (Korea Univ., Korea)
Abstract: In this study, n-type a-Si:H TFTs with a back-channel-etching structure were fabricated on polyimide substrates.?We investigate the channel dimension affecting the electrical characteristics as a function of bending radius. Especially, the shift of the threshold voltage in the TFT with a channel width of 8 ¥ìm was up to 6.6 V at a bending radius of 6 mm. Compared to the TFTs with narrow channels, the TFTs with wide channels show relatively more stable performance even under a bending radius of 6 mm due to the more number of electrical conducting paths in the wide channels.
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