Date

Place

Room H (Room Hall 1, 1F)
P2. Poster Session II
August 21, 2015 (Friday)
14:00 ~ 15:30

[P2-45]
14:00 ~ 15:30
Title:Photo-Annealed Bilayer-Channel Metal-Oxide Thin Film Transistors for Transparent and Flexible Devices
Woobin Lee, Jimi Eom, Woonghee Byun, and Yong-Hoon Kim (Sungkyunkwan Univ., Korea)
Abstract: Recently, solution-processed amorphous metal-oxide semiconductor TFTs have gained a considerable interest owing to their high electrical performance, good bias stability and possibilities to fabricate at a low temperature using photochemical activation process. To further enhance their electrical performance, especially the field-effect mobility and stability, multi-layer structured channel have been reported. Using a solution process, the surface characteristics of the first channel layer largely affect the coating uniformity of the second channel layer. Particularly, a thermally annealed oxide film such as InOx shows relatively hydrophobic surface characteristics and the wetting behavior of the second channel precursor solution is very poor. Here, we investigated multi-layer stacking of metal-oxide channels by employing photochemical activation process. It was found that compared to thermal annealing, the photo-annealed channel surface showed more hydrophilic characteristic and provide a facile multi-layer stacking without any additional surface treatment process. We fabricated a bilayer-structured oxide TFT comprising a high-conductivity first channel layer (InOx) and a second channel layer of conventional oxide material such as IGZO. The more hydrophilic nature of the photo-annealed oxide surface can be attributed to additional hydroxyl groups present on the surface of the channel layer.
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