Date
Place
- Room H (Room Hall 1, 1F)
- P2. Poster Session II
- August 21, 2015 (Friday)
- 14:00 ~ 15:30
- [P2-5]
- 14:00 ~ 15:30
- Title:Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic Layer Deposition
- Da-Bin Jeon (Kyung Hee Univ., Korea), Nak-Jin Seong, Kyujeong Choi, Woong-Chul Shin (NCD Co., Ltd., Korea), and Sung-Min Yoon (Kyung Hee Univ., Korea)
Abstract: ?Establishment of the atomic-layer deposition (ALD) process for the IGZO thin film can be a very powerful solution, considering that the ALD provides us such benefits as a precise control of film thickness and composition, an excellent conformality, and a dense and homogeneous film structure. Furthermore, these features can be uniformly obtained on a larger-size substrate; this is promising for large-area backplane applications. In this work, we fabricated the oxide TFTs using ALD-IGZO active channel and investigated on the effects of post-annealing temperature variation. This is the first report on the ALD-IGZO TFTs.?We fabricated Top-gate ALD-IGZO TFTs. And?it was found that the ALD-IGZO TFT treated at 250 oC showed the best performances; the carrier mobility, subthreshold slope, and threshold voltage were successfully obtained to be 12.6 cm2/V¡¤s, 0.09 V/dec, and 0.3 V, respectively.?These impressive results suggest that the proposed ALD process for the preparation of IGZO active channel could be very promising and inspiring for large-area backplane devices for the next-generation FPDs. The extensive investigation and analysis on the device characteristics including the device stabilities for the ALD-IGZO TFTs will be discussed at presentation.
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