Date

Place

[P2-8]
14:00 ~ 15:30
Title:Polymer Gate Insulators for Stable Operation of Organic Field Effect Transistors
Kouji Suemori and Toshihide Kamata (AIST, Japan)
Abstract: We investigated the effect of the polymer gate insulators on the stability of Organic field-effect transistors (OFETs). ?When a polymer insulator is used for a gate-dielectric layer of an OFET, 3 components of time variation of drain current were observed. First component is increase in drain current with the time scale of several millisecond. This component can be attributed by increase in capacitance of the polymer gate-insulators caused by structural relaxation of the polymer insulator. Second component is decay of drain current with the time scale of several-hundred millisecond. This may be attributed by carrier traps originated from surface dipole of the polymer-insulators. The third component??is well known threshold voltage shift caused by bias-stress effect. This component have a?time scale of greater than several-tens minute. Based on these results, we will propose guideline to choose polymer gate insulator for stable OFET operations.
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