Date
Place
- Room C (Room 323)
- 24. Printable Transistors
- August 20, 2015 (Thursday)
- 09:00 ~ 10:30
- [24-1]
- 09:00 ~ 09:25
- Title:[Invited] Bias-Stress-Induced Charge Trapping in Organic Thin-Film Transistors
- Boseok Kang, Byungho Moon, Hyun Ho Choi, and Kilwon Cho (POSTECH, Korea)
Abstract: When organic thin-film transistors (OTFTs) are operated under continuous gate and source/drain biases, the resulting bias stresses can degrade overall device performance, referred to bias-stress-driven electrical instabilities. Here, we introduce the methods for analyzing such bias instabilities. Based on these methods, it is demonstrated that the polymer chain ends of polymer gate dielectrics can act as charge trapping sites. Furthermore, a new strategy for analyzing charge traps at the semiconductor-dielectric interface is described.
PDF Download
Type
